{"id":239397,"date":"2024-10-19T15:39:29","date_gmt":"2024-10-19T15:39:29","guid":{"rendered":"https:\/\/pdfstandards.shop\/product\/uncategorized\/bs-en-62396-12016\/"},"modified":"2024-10-25T10:21:39","modified_gmt":"2024-10-25T10:21:39","slug":"bs-en-62396-12016","status":"publish","type":"product","link":"https:\/\/pdfstandards.shop\/product\/publishers\/bsi\/bs-en-62396-12016\/","title":{"rendered":"BS EN 62396-1:2016"},"content":{"rendered":"

IEC 62396-1:2016(E) is available as \/2 which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition. IEC 62396-1:2016(E) provides guidance on atmospheric radiation effects on avionics electronics used in aircraft operating at altitudes up to 60 000 ft (18,3 km). It defines the radiation environment, the effects of that environment on electronics and provides design considerations for the accommodation of those effects within avionics systems. This International Standard helps aerospace equipment manufacturers and designers to standardise their approach to single event effects in avionics by providing guidance, leading to a standard methodology. This edition includes the following significant technical changes with respect to the previous edition: – incorporation of references to some new papers and issues which have appeared since 2011; – addition of solar flares and extreme space weather reference to a proposed future Part 6; – addition of reference to a proposed new Part 7 on incorporating atmospheric radiation effects analysis into the system design process; – addition of a reference to a proposed future Part 8 on other particles including protons, pions and muons.<\/p>\n

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PDF Pages<\/th>\nPDF Title<\/th>\n<\/tr>\n
4<\/td>\nCONTENTS <\/td>\n<\/tr>\n
8<\/td>\nFOREWORD <\/td>\n<\/tr>\n
10<\/td>\nINTRODUCTION <\/td>\n<\/tr>\n
11<\/td>\n1 Scope
2 Normative references
3 Terms and definitions <\/td>\n<\/tr>\n
20<\/td>\n4 Abbreviations and acronyms <\/td>\n<\/tr>\n
23<\/td>\n5 Radiation environment of the atmosphere
5.1 Radiation generation
5.2 Effect of secondary particles on avionics
5.3 Atmospheric neutrons
5.3.1 General <\/td>\n<\/tr>\n
24<\/td>\n5.3.2 Atmospheric neutrons energy spectrum and SEE cross-sections
Figures
Figure 1 \u2013 Energy spectrum of atmospheric neutrons at 40\u00a0000 ft (12\u00a0160\u00a0m), latitude 45\u00b0 <\/td>\n<\/tr>\n
26<\/td>\n5.3.3 Altitude variation of atmospheric neutrons <\/td>\n<\/tr>\n
27<\/td>\n5.3.4 Latitude variation of atmospheric neutrons
Figure 2 \u2013 Model of the atmospheric neutron flux variation with altitude (see Annex D) <\/td>\n<\/tr>\n
28<\/td>\nFigure 3 \u2013 Distribution of vertical rigidity cut-offs around the world
Figure 4 \u2013 Model of atmospheric neutron flux variation with latitude <\/td>\n<\/tr>\n
29<\/td>\n5.3.5 Thermal neutrons within aircraft
5.4 Secondary protons <\/td>\n<\/tr>\n
30<\/td>\n5.5 Other particles
Figure 5 \u2013 Energy spectrum of protons within the atmosphere <\/td>\n<\/tr>\n
31<\/td>\n5.6 Solar enhancements
5.7 High altitudes greater than 60\u00a0000 ft (18\u00a0290 m) <\/td>\n<\/tr>\n
32<\/td>\n6 Effects of atmospheric radiation on avionics
6.1 Types of radiation effects
6.2 Single event effects (SEEs)
6.2.1 General <\/td>\n<\/tr>\n
33<\/td>\n6.2.2 Single event upset (SEU)
6.2.3 Multiple bit upset (MBU) and multiple cell upset (MCU) <\/td>\n<\/tr>\n
35<\/td>\n6.2.4 Single effect transients (SETs) <\/td>\n<\/tr>\n
36<\/td>\n6.2.5 Single event latch-up (SEL)
6.2.6 Single event functional interrupt (SEFI)
6.2.7 Single event burnout (SEB) <\/td>\n<\/tr>\n
37<\/td>\n6.2.8 Single event gate rupture (SEGR)
6.2.9 Single event induced hard error (SHE)
6.2.10 SEE potential risks based on future technology <\/td>\n<\/tr>\n
38<\/td>\n6.3 Total ionising dose (TID) <\/td>\n<\/tr>\n
39<\/td>\n6.4 Displacement damage
7 Guidance for system designs
7.1 Overview <\/td>\n<\/tr>\n
40<\/td>\nFigure 6 \u2013 System safety assessment process <\/td>\n<\/tr>\n
41<\/td>\nTables
Table 1 \u2013 Nomenclature cross reference <\/td>\n<\/tr>\n
42<\/td>\n7.2 System design
Figure 7 \u2013 SEE in relation to system and LRU effect <\/td>\n<\/tr>\n
43<\/td>\n7.3 Hardware considerations <\/td>\n<\/tr>\n
44<\/td>\n7.4 Electronic devices characterisation and control
7.4.1 Rigour and discipline
7.4.2 Level A systems
7.4.3 Level B <\/td>\n<\/tr>\n
45<\/td>\n7.4.4 Level C
7.4.5 Levels D and E
8 Determination of avionics single event effects rates
8.1 Main single event effects <\/td>\n<\/tr>\n
46<\/td>\n8.2 Single event effects with lower event rates
8.2.1 Single event burnout (SEB) and single event gate rupture (SEGR)
8.2.2 Single event transient (SET) <\/td>\n<\/tr>\n
47<\/td>\n8.2.3 Single event hard error (SHE)
8.2.4 Single event latch-up (SEL)
8.3 Single event effects with higher event rates \u2013 Single event upset data
8.3.1 General <\/td>\n<\/tr>\n
48<\/td>\n8.3.2 SEU cross-section
8.3.3 Proton and neutron beams for measuring SEU cross-sections <\/td>\n<\/tr>\n
50<\/td>\nFigure 8 \u2013 Variation of RAM SEU cross-section as function of neutron\/proton energy <\/td>\n<\/tr>\n
51<\/td>\nFigure 9 \u2013 Neutron and proton SEU bit cross-section data <\/td>\n<\/tr>\n
52<\/td>\n8.3.4 SEU per bit cross-section trends in SRAMs <\/td>\n<\/tr>\n
53<\/td>\n8.3.5 SEU per bit cross-section trends and other SEE in DRAMs
Figure 10 \u2013 SEU cross-section in SRAMs as function of the manufacture date <\/td>\n<\/tr>\n
54<\/td>\nFigure 11 \u2013 SEU cross-section in DRAMs as function of manufacture date <\/td>\n<\/tr>\n
55<\/td>\n8.4 Calculating SEE rates in avionics <\/td>\n<\/tr>\n
56<\/td>\n8.5 Calculation of availability of full redundancy
8.5.1 General
8.5.2 SEU with mitigation and SET <\/td>\n<\/tr>\n
57<\/td>\n8.5.3 Firm errors and faults
9 Considerations for SEE compliance
9.1 Compliance
9.2 Confirm the radiation environment for the avionics application
9.3 Identify the system development assurance level
9.4 Assess preliminary electronic equipment design for SEE
9.4.1 Identify SEE-sensitive electronic components
9.4.2 Quantify SEE rates
9.5 Verify that the system development assurance level requirements are met for SEE
9.5.1 Combine SEE rates for the entire system <\/td>\n<\/tr>\n
58<\/td>\n9.5.2 Management of electronic components control and dependability
9.6 Corrective actions <\/td>\n<\/tr>\n
59<\/td>\nAnnexes
Annex A (informative) Thermal neutron assessment <\/td>\n<\/tr>\n
60<\/td>\nAnnex B (informative) Methods for calculating SEE rates in avionics electronics
B.1 Proposed in-the-loop system test \u2013 Irradiating avionics LRU in neutron\/proton beam, with output fed into aircraft simulation computer
B.2 Irradiating avionics LRU in a neutron\/proton beam <\/td>\n<\/tr>\n
61<\/td>\nB.3 Utilising existing SEE data for specific electronic components on LRU
B.3.1 Neutron proton data <\/td>\n<\/tr>\n
62<\/td>\nB.3.2 Heavy ion data
Table\u00a0B.1 \u2013 Sources of high energy proton or neutron SEU cross-section data <\/td>\n<\/tr>\n
63<\/td>\nB.4 Applying generic SEE data to all electronic components on LRU
Table\u00a0B.2 \u2013 Some models for the use of heavy ion SEE data to calculate proton SEE data <\/td>\n<\/tr>\n
64<\/td>\nB.5 Component level laser simulation of single event effects <\/td>\n<\/tr>\n
65<\/td>\nB.6 Determination of SEU rate from service monitoring <\/td>\n<\/tr>\n
67<\/td>\nAnnex C (informative) Review of test facility availability
C.1.1 Neutron facilities <\/td>\n<\/tr>\n
68<\/td>\nC.1.2 Proton facilities <\/td>\n<\/tr>\n
70<\/td>\nC.1.3 Laser facilities <\/td>\n<\/tr>\n
71<\/td>\nC.2 Facilities in Europe
C.2.1 Neutron facilities <\/td>\n<\/tr>\n
73<\/td>\nC.2.2 Proton facilities <\/td>\n<\/tr>\n
74<\/td>\nC.2.3 Laser facilities <\/td>\n<\/tr>\n
75<\/td>\nAnnex D (informative) Tabular description of variation of atmospheric neutron flux with altitude and latitude
Table D.1 \u2013 Variation of 1\u00a0MeV to 10\u00a0MeV neutron flux in the atmosphere with altitude <\/td>\n<\/tr>\n
76<\/td>\nTable D.2 \u2013 Variation of 1 MeV to 10\u00a0MeV neutron flux in the atmosphere with latitude <\/td>\n<\/tr>\n
77<\/td>\nAnnex E (informative) Consideration of effects at higher altitudes <\/td>\n<\/tr>\n
78<\/td>\nFigure E.2 \u2013 Integral linear energy transfer spectra in siliconat 75\u00a0000 ft (22\u00a0860\u00a0m) for cut-off rigidities (R) from 0 to 17 GV
Figure E.1 \u2013 Integral linear energy transfer spectra in siliconat 100\u00a0000 ft (30\u00a0480\u00a0m) for cut-off rigidities (R) from 0 GV to 17 GV <\/td>\n<\/tr>\n
79<\/td>\nFigure E.3 \u2013 Integral linear energy transfer spectra in siliconat 55\u00a0000 ft (16\u00a0760\u00a0m) for cut-off rigidities (R) from 0 GV to 17 GV
Figure E.4 \u2013 Influence of solar modulation on integral linear energytransfer spectra in silicon at 150\u00a0000 ft (45\u00a0720\u00a0m)for cut-off rigidities (R) of 0 GV and 8 GV <\/td>\n<\/tr>\n
80<\/td>\nFigure E.5 \u2013 Influence of solar modulation on integral linear energy transferspectra in silicon at 55\u00a0000 ft (16\u00a0760\u00a0m) for cut-off rigidities (R) of 0 GV and 8 GV <\/td>\n<\/tr>\n
81<\/td>\nFigure E.6 \u2013 Calculated contributions from neutrons, protons and heavy ionsto the SEU rates of the Hitachi-A 4 Mbit SRAM as a function of altitude at a cut-off rigidity (R) of 0 GV
Figure E.7 \u2013 Calculated contributions from neutrons, protons and heavy ionsto the SEU rates of the Hitachi-A 4 Mbit SRAM as a function of altitude at a cut-off rigidity (R) of 8 GV <\/td>\n<\/tr>\n
82<\/td>\nAnnex F (informative) Prediction of SEE rates for ions <\/td>\n<\/tr>\n
83<\/td>\nFigure F.1 \u2013 Example differential LET spectrum
Figure F.2 \u2013 Example integral chord length distributionfor isotropic particle environment <\/td>\n<\/tr>\n
85<\/td>\nAnnex G (informative) Late news as of 2014 on SEE cross-sections applicable to the atmospheric neutron environment
G.1 SEE cross-sections key to SEE rate calculations
G.2 Limitations in compiling SEE cross-section data <\/td>\n<\/tr>\n
86<\/td>\nG.3 Cross-section measurements (figures with data from public literature)
G.4 Conservative estimates of SEE cross-section data
G.4.1 General <\/td>\n<\/tr>\n
87<\/td>\nG.4.2 Single event upset (SEU)
Figure G.1 \u2013 Variation of the high energy neutron SEU cross-section per bit as a function of electronic device feature size for SRAMs and SRAM arrays in microprocessors and FPGAs <\/td>\n<\/tr>\n
88<\/td>\nFigure G.2 \u2013 Variation of the high energy neutron SEU cross-section per bit as a function of electronic device feature size for DRAMs <\/td>\n<\/tr>\n
89<\/td>\nG.4.3 Multiple cell upset (MCU)
Figure G.3 \u2013 Variation of the high energy neutron SEU cross-section per electronic device as a function of electronic device feature size for NOR and NAND type flash memories <\/td>\n<\/tr>\n
90<\/td>\nG.4.4 Single event functional interrupt (SEFI)
Figure G.4 \u2013 Variation of the MCU\/SBU percentage as a function of feature size based on data from many researchers in SRAMs [43, 45] <\/td>\n<\/tr>\n
91<\/td>\nG.4.5 Single event latch-up (SEL)
Figure G.5 \u2013 Variation of the high energy neutron SEFI cross-section in DRAMs as a function of electronic device feature size <\/td>\n<\/tr>\n
92<\/td>\nFigure G.6 \u2013 Variation of the high energy neutron SEFI cross-sectionin microprocessors and FPGAs as a function of electronic device feature size <\/td>\n<\/tr>\n
93<\/td>\nG.4.6 Single event transient (SET)
Figure G.7 \u2013 Variation of the high energy neutron single event latch-up (SEL) cross-section in CMOS devices (SRAMs, processors) as a function of electronic device feature size <\/td>\n<\/tr>\n
94<\/td>\nG.4.7 Single event burnout (SEB)
Figure G.8 \u2013 Single event burnout (SEB) cross-section in power electronic devices (400\u00a0V to 1\u00a0200\u00a0V) as a function of drain-source voltage (VDS)
Table G.1 \u2013 Information relevant to neutron-induced SET <\/td>\n<\/tr>\n
96<\/td>\nAnnex H (informative) Calculating SEE rates from non-white (non-atmospheric like) neutron cross-sections for small geometry electronic components
H.1 Energy thresholds
H.2 Nominal neutron fluxes
Table H.1 \u2013 Approximate SEU energy thresholds for SRAM-based devices
Table H.2 \u2013 Neutron fluxes above different energy thresholds (40 000 ft, latitude 45\u00b0) <\/td>\n<\/tr>\n
97<\/td>\nH.3 Calculating event rates using non-atmospheric like cross-sections for small geometry electronic devices <\/td>\n<\/tr>\n
98<\/td>\nBibliography <\/td>\n<\/tr>\n<\/table>\n","protected":false},"excerpt":{"rendered":"

Process management for avionics. Atmospheric radiation effects – Accommodation of atmospheric radiation effects via single event effects within avionics electronic equipment<\/b><\/p>\n\n\n\n\n
Published By<\/td>\nPublication Date<\/td>\nNumber of Pages<\/td>\n<\/tr>\n
BSI<\/b><\/a><\/td>\n2016<\/td>\n108<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n","protected":false},"featured_media":239400,"template":"","meta":{"rank_math_lock_modified_date":false,"ep_exclude_from_search":false},"product_cat":[2641],"product_tag":[],"class_list":{"0":"post-239397","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-bsi","8":"first","9":"instock","10":"sold-individually","11":"shipping-taxable","12":"purchasable","13":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/pdfstandards.shop\/wp-json\/wp\/v2\/product\/239397","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/pdfstandards.shop\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/pdfstandards.shop\/wp-json\/wp\/v2\/types\/product"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/pdfstandards.shop\/wp-json\/wp\/v2\/media\/239400"}],"wp:attachment":[{"href":"https:\/\/pdfstandards.shop\/wp-json\/wp\/v2\/media?parent=239397"}],"wp:term":[{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/pdfstandards.shop\/wp-json\/wp\/v2\/product_cat?post=239397"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/pdfstandards.shop\/wp-json\/wp\/v2\/product_tag?post=239397"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}