ASTM-F980 2010

$40.63

F980-10 Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices

Published By	Publication Date	Number of Pages
ASTM	2010	7

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Description

ASTM F980-10

Historical Standard: Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices

ASTM F980

Scope

1.1 This guide defines the requirements and procedures for testing silicon discrete semiconductor devices and integrated circuits for rapid-annealing effects from displacement damage resulting from neutron radiation. This test will produce degradation of the electrical properties of the irradiated devices and should be considered a destructive test. Rapid annealing of displacement damage is usually associated with bipolar technologies.

1.1.1 Heavy ion beams can also be used to characterize displacement damage annealing (1) , but ion beams have significant complications in the interpretation of the resulting device behavior due to the associated ionizing dose. The use of pulsed ion beams as a source of displacement damage is not within the scope of this standard.

1.2 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.

1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to consult and establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Keywords

annealing factor; annealing function; displacement damage; integrated circuits; neutron damage; neutron degradation; photoconducting device; rapid annealing; semiconductor devices; Annealing; Defects–semiconductors; Destructive testing–semiconductors; Displacement–electronic materials/applications; Electrical conductors (semiconductors); Electronic hardness; Integrated circuits; Neutron radiation; Pulsed neutron-radiation source; Radiation exposure–electronic components/devices; Radiation-hardness testing; Rapid annealing effects; Short-term damage; Vulnerability

ICS Code

ICS Number Code 29.045 (Semiconducting materials)

DOI: 10.1520/F0980-10

PDF Catalog

PDF Pages	PDF Title
1	Scope Referenced Documents Terminology
2	Summary of Guide FIG. 1
3	FIG. 2
4	Significance and Use Interferences
5	Apparatus Procedure
6	Report FIG. 3
7	Keywords REFERENCES

Additional information

Standard Title	F980-10 Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices
Published Code	ASTM
Publication Date	2010
Pages Count	7