{"id":194680,"date":"2024-10-19T12:21:13","date_gmt":"2024-10-19T12:21:13","guid":{"rendered":"https:\/\/pdfstandards.shop\/product\/uncategorized\/ieee-c62-42-3-2017\/"},"modified":"2024-10-25T04:52:14","modified_gmt":"2024-10-25T04:52:14","slug":"ieee-c62-42-3-2017","status":"publish","type":"product","link":"https:\/\/pdfstandards.shop\/product\/publishers\/ieee\/ieee-c62-42-3-2017\/","title":{"rendered":"IEEE C62.42.3 2017"},"content":{"rendered":"
New IEEE Standard – Active. Surge protective components (SPCs) used in power and telecom surge protective devices (SPDs) and equipment ports are covered in the IEEE C62.42\u2122 guide series. This part, Part 3 of the series, describes silicon PN-Junction clamping diode SPCs and covers technology variants, including forward biased semiconductor diodes, Zener breakdown semiconductor diodes, avalanche breakdown semiconductor diodes, punch-through semiconductor bipolar junction transistor diodes, and fold-back semiconductor bidirectional transistor diodes, as well as component construction; characteristics; ratings; and application examples.<\/p>\n
PDF Pages<\/th>\n | PDF Title<\/th>\n<\/tr>\n | ||||||
---|---|---|---|---|---|---|---|
1<\/td>\n | IEEE Std C62.42.3\u2122-2017 Front cover <\/td>\n<\/tr>\n | ||||||
2<\/td>\n | Title page <\/td>\n<\/tr>\n | ||||||
4<\/td>\n | Important Notices and Disclaimers Concerning IEEE Standards Documents <\/td>\n<\/tr>\n | ||||||
7<\/td>\n | Participants <\/td>\n<\/tr>\n | ||||||
8<\/td>\n | Introduction <\/td>\n<\/tr>\n | ||||||
9<\/td>\n | Contents <\/td>\n<\/tr>\n | ||||||
10<\/td>\n | List of Figures <\/td>\n<\/tr>\n | ||||||
12<\/td>\n | 1.\u2002Scope 2.\u2002Normative references <\/td>\n<\/tr>\n | ||||||
13<\/td>\n | 3.\u2002Definitions, acronyms, and abbreviations 3.1\u2002Definitions <\/td>\n<\/tr>\n | ||||||
15<\/td>\n | 3.2\u2002Acronyms and abbreviations <\/td>\n<\/tr>\n | ||||||
16<\/td>\n | 4.\u2002Construction 4.1\u2002Packaging 4.2\u2002Semiconductor junction structure and electrical properties <\/td>\n<\/tr>\n | ||||||
22<\/td>\n | 5.\u2002Characteristics 5.1\u2002Stand-off or maximum reverse working voltage, VRWM 5.2\u2002Breakdown voltage, V(BR) <\/td>\n<\/tr>\n | ||||||
23<\/td>\n | 5.3\u2002Clamping voltage, VC <\/td>\n<\/tr>\n | ||||||
24<\/td>\n | 5.4\u2002Punch-through voltage, V(PT) 5.5\u2002Snap-back voltage, V(SB) 5.6\u2002Forward biased PN-junction voltage, VF <\/td>\n<\/tr>\n | ||||||
26<\/td>\n | 5.7\u2002Junction capacitance CJ <\/td>\n<\/tr>\n | ||||||
27<\/td>\n | 5.8\u2002Package inductance <\/td>\n<\/tr>\n | ||||||
28<\/td>\n | 6.\u2002Ratings 6.1\u2002Peak pulse current, IPP <\/td>\n<\/tr>\n | ||||||
29<\/td>\n | 6.2\u2002Maximum peak pulse power, PPPM <\/td>\n<\/tr>\n | ||||||
30<\/td>\n | 6.3\u2002Power dissipation, PD 7.\u2002Application examples 7.1\u2002Series connection <\/td>\n<\/tr>\n | ||||||
31<\/td>\n | 7.2\u2002Parallel connection <\/td>\n<\/tr>\n | ||||||
32<\/td>\n | 7.3\u2002DC supply protection <\/td>\n<\/tr>\n | ||||||
34<\/td>\n | 7.4\u2002Power frequency protection 7.5\u2002Signal protection <\/td>\n<\/tr>\n | ||||||
41<\/td>\n | Annex A (informative) Bibliography <\/td>\n<\/tr>\n | ||||||
42<\/td>\n | Back cover <\/td>\n<\/tr>\n<\/table>\n","protected":false},"excerpt":{"rendered":" IEEE Guide for the Application of Surge Protective Components in Surge Protective Devices and Equipment Ports — Part 3: Silicon PN-Junction<\/b><\/p>\n |